The following facilities are available at the DMI: 70 m² of class 10,000 clean room for IC processing, 100 m² for physical and electrical characterization, 100 m² for assembly of processing equipment and for performing less critical processes.

The following equipment are available at the DMI:

1- Processing equipment:

• Sputtering equipment
• Metal evaporation equipment
• Home made plasma etcher for fluorine containing gases
• Home made plasma etcher for chlorine containing gases
• Rapid thermal annealing and oxidation furnace with halogen lamps
• Conventional furnaces
• LPCVD system for polysilicon and silicon nitride deposition
• Home made PECVD cluster tool system for undoped and doped TEOS silicon oxide
• Electron beam lithography equipment
• 2 optical lithography contact aligners
• Anisotropic wet etching reactor
• Several wet benches

• Scanning Electron Microscopy (SEM)
• Atomic Force Microscopy (AFM)
• X-Ray Diffraction (XRD)
• Secondary Ion Mass Spectrometry (SIMS)
• Total X-Ray Reflection Fluorescence Analysis (TXRFA)
• Thin film stress measurement system
• Elipsometry
• Profilometry
• Roughness measurement by laser light scattering
• I - V and C - V measurement stations
• Fourier Transform Infrared Spectroscopy (FTIRS)
• Rutherford Backscattering Spectrometry (RBS)
• Four-point probe analysis
• Optical microscopy
• Pressure calibration with environmental chamber

DMI Home Page

(Last update: 20/04/00)