R&D of Process Steps for Fabrication of Integrated Circuits

R&D activities are occurring in the following fields:

a)Patterning Processes:

Optical lithography Dry Etching of SiO₂, Si₃N₄, Si, Al, and polymer thin films
Characterization of plasma related phenomena
Electron Beam Lithography

b)Thin Films:

Titanium and cobalt silicides obtained by sputter deposition or metal evaporation, followed by a rapid thermal annealing
Polysilicon and silicon nitride thin films, obtained by LPCVD process
Undoped silicon dioxide, PSG, BSG and BPSG thin films, obtained by TEOS/PECVD deposition technique

c)Application of Surface Engineering to the Development of MOS and Sensor Structures:

Procedures for chemical cleaning of semiconductor surfaces
Characterization and modeling of surface contamination
Characterization of surface microroughness
Rapid Thermal Oxidation (RTO) of silicon surfaces
Annealing and flowing of CVD oxides
Sintering and annealing of interface states
Modeling of rapid thermal processing

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