International Publications (1999)

  1. “Silicon nitride coupled plasma deposited from mixtures of silane-nitrogen and silane ammonia”, Luís da Silva Zambom, Ronaldo Domingues Mansano e Rogério Furlan, International Conference on Microelectronics and Packaging ICMP'99, Campinas, SP, Brasil, 3 a 6 de Agosto de 1999, p. 286-288.
  2. “Nitric oxide sensor based on silicon planar technology”, Marcelo Bariatto Andrade Fontes, Lúcio Angnes, Koiti Araki, Rogério Furlan e Jorge J. Santiago-Aviles, International Conference on Microelectronics and Packaging ICMP'99, Campinas, SP, Brasil, 3 a 6 de Agosto de 1999, p. 252-256.
  3. “Development of a flow microsensor built on silicon”, Roberto Jacobe Rodrigues e Rogério Furlan, International Conference on Microelectronics and Packaging ICMP'99, Campinas, SP, Brasil, 3 a 6 de Agosto de 1999, p. 261-263.
  4. “Microelectromechanical structures development for chemical analysis: study of the porous silicon as adsorbent”, aceito para publicação nos Proceedings do Micro/MEMS Symposium (SPIE)", Silvana Gasparotto de Souza, Elizabete Galeazzo, Maria Lúcia Pereira da Silva, Rogério Furlan, Francisco Javier Ramirez Fernandez, Queensland, Australia 26-29 October, 1999.
  5. "Adhesion improvement of cellulose to polypropylene: a comparison of plasma treatment o PP and plasma deposition on cellulose", I. H. Tan, N. Demarquette, M. L. P. Silva. F. T. Degasperi, R. Dallacqua, ISPC-14 Symposium proceedings, 1907 (1999)
  6. "Use of hexamethyldisilazane for obtaining modified silicon oxide films", S. Nogueira, M. L. P. Silva, I. H. Tan, ISPC-14 Symposium proceedings, 1393 (1999)
  7. “A Novel Leakage Drain Current Model for SOI MOSFETs Devices at High-Temperature”, M. Bellodi and J. A. Martino, International Conference on Microelectronics and Packaging ICMP’99, Campinas - SP, p.298-301, agosto,1999.
  8. “Analysis of the Back Gate Voltage on the LDD SOI nMOSFET Series Resistance”, A.S. Nicolett, J. A. Martino, E.Simoen and C.Clayes, International Conference on Microelectronics and Packaging ICMP’99, Campinas - SP, p.302-304, agosto,1999.
  9. “The Graded-Channel SOI nMOSFET and its Potential to Analog Applications”, M. A. Pavanello, J. A. Martino, V. Dessard and D. Flandre,International Conference on Microelectronics and Packaging ICMP’99, Campinas - SP, p.105-109, agosto,1999.
  10. “A Novel Simple Method to Extract the Effective LDD Doping Concentration on Fully Depleted SOI nMOSFET”, A.S. Nicolett, J. A. Martino, E.Simoen and C.Clayes, International Conference on Microelectronics and Packaging ICMP’99, Campinas - SP, p.110-114, agosto,1999.
  11. “Extraction of the Interface Charge Density at the Silicon Substrate Interface in SOI MOSFETs at Cryogenic Temperatures”, M. A. Pavanello and J. A. Martino, International Conference on Microelectronics and Packaging ICMP’99, Campinas - SP, p.115-119, agosto,1999.
  12. “Determination of Silicon Film Thickness by SOI-MOS Capacitor without the Influence of Accumulation Layer”, V. Sonnenberg and J. A. Martino, International Conference on Microelectronics and Packaging ICMP’99, Campinas / SP, pag. 295, 1999.
  13. “A Simple Method to Extract the Oxide Charge Density at the Buried Oxide/Substrate Interface in SOI Capacitor”, V. Sonnenberg and J. A. Martino, 9th SOI Symposium, Electrochemical Society Proceedings, Seatle, Volume 99-3, pag. 189, 1999.
  14. “The Graded-Channel SOI MOSFET to Alleviate the Parasitic Bipolar Effects and Improve the Output Characteristics”, M. A. Pavanello, J. A. Martino, V. Dessard and D. Flandre 9th SOI Symposium, Electrochemical Society Proceedings, Seatle, Volume 99-3, pag. 426, 1999.
  15. “Extraction of the Oxide Charges at the Buried Oxide/Silicon Substrate interface in Accumulation-Mode SOI pMOSFETs at Low Temperatures”, M. A. Pavanello and J. A. Martino, 9th SOI Symposium, Electrochemical Society Proceedings, Seatle, Volume 99-3, pag. 201, 1999.
  16. “Study of the Leakege Drain Current Components in Aaccumulation-Mode SOI pMOSFETs at High Temperature”, M. Bellodi and J. A. Martino, 9th SOI Symposium, Electrochemical Society Proceedings, Seatle, Volume 99-3, pag. 287, 1999.
  17. "SIPOS Deposition Process for Semiconductor Power Devices Applications", E.S. Ferreira and N.I. Morimoto; International Conference on Microelectronics and Packaging 1999, pp 274-276, Campinas, SP, 1999.
  18. "Argon flow Effects in the PETEOS SiO2 Thin Films Characteristics", C.E. Viana, A.N.R. Silva and N.I. Morimoto; International Conference on Microelectronics and Packaging 1999, pp 33-36, Campinas, SP, 1999.
  19. “Influence of methane addition on the characteristics of magnetron sputtered hydrogenated carbon films”, R.D. Mansano, P. M. Nogueira, L. S. Zambom, P. Verdonck, M. Massi, H.S. Maciel, International Conference on Microelectronics and Packaging, pp 282 -285, Campinas, SP, 1999.
  20. “Fabrication of an array of divergent microlenses for multiple beam splitting”, G. A. Cirino, R.D. Mansano, P. Verdonck, L. G. Neto,  International Conference on Microelectronics and Packaging, pp 305 - 308, Campinas, SP, 1999.
  21. “The applicability of Langmuir probes for end point detection of polymer etching” , R.M. de Castro, P. Verdonck, M.B. Pisani, R.D. Mansano, G.A. Cirino, H.S. Maciel, and M. Massi,  International Conference on Microelectronics and Packaging, pp 24 -28, Campinas, SP, 1999.
  22. “Multiple line generation over high angle using hybrid parabolic profile and binary surface-relief phase element”, L. G. Neto, L. B. Roberto, P. Verdonck, R. D. Mansano, G. A. Cirino, M. A. Stefani, 18 th Congress of the International Commission for Optics: Optics for the Next Millennium, pp. 487-488, SPIE Volume 3749, San Francisco, California, USA, 1999.
  23. “Fabrication of hybrid diffractive and refractive optical element for multiple line genaration over high angle”, L. G. Neto, L. B. Roberto, P. Verdonck, R. D. Mansano, G. A. Cirino, M. A. Stefani, in Proceeding of the international symposion on Laser Metrology for precision measurement and inspection in industry, pp. 3.29 – 3.36, Florianópolis, Brazil 1999.
  24. “Experimental results of an implement configuration for low offset voltage and it temperature drift reduction in piezoresistive pressure sensors”, D. Hernandez, E. Charry R., International Conferences on Microelectronics and Packaging, ICMP 1999.
  25. “Design essential results of a CMOS current references”, F Chavez, D. Hernadez, C. Acevedo-Leme, E.Charry R.,  International Conferences on Microelectronics and Packaging, ICMP 1999.
  26. “Charaterization of KOH etching of silicon (N and P type) and silicon dioxide”, H Furlan, S.G Souza, E.Charry R.and R. Furlan,  Microelectronics and Sensors 1999.
  27. “Micromechanical structures for enviromental sensors”, Conferência Internacional sobre Física do Meio Ambiente”, Rogério Furlan e Maria Lúcia Pereira da Silva, Brasília, 22 a 25 de março de 1999.
  28. “Silicon based materials and micromechanical structures”, Nilton Itiro Morimoto e Rogério Furlan, Escuela de Verano ASEVA-1999, Microelectronics, Thin Films and Nanotechnology, Ávila, Espanha, 14 de Julho de 1999.
  29. “Effect of the structure size and of the structure position inside KOH and TMAH solutions on the activation energy and on the pre-exponential factor”, Silvana Gasparotto de Souza, Humber Furlan, Edgar Charry Rodrigues e Rogerio Furlan, Microelectrónica y Sensores’99, Havana, Cuba, 1999, p.13.
  30. “Proposal of na Improvement in the SOISPICE Circuit Simulator”, L. M. Camillo, M.A. Pavanello, and J. A. Martino, International Conference on Microelectronics and Packaging ICMP’99, Campinas - SP, p.309-311, agosto,1999.
  31. “Effects of methane content on the characteristics of DLC films produced by sputtering”, R.D. Mansano, M.Massi, L.S. Zambom, P. M. Nogueira, L. N. Nishioka, H. S. Maciel, C. Otani, P. Verdonck, and N. F. Leite, Abstract books of the 11th International  Conference on Thin Films, Cancúm, México, Agosto  1999, pp. 94.
  32. "Characterization of Silicon Oxide Thin Films Deposited by TEOS PECVD", Ana Neilde R. da Silva, Carlos E. Viana and Nilton I. Morimoto, 4th Brazilian Symposium on Glasses and Related Materials, Ouro Preto, Minas Gerais, de 25 -27 de novembro de 1999.
  33. "TEOS SiO2 Films Deposited at Low Temperature"; A.N.R. da Silva, N.I.Morimoto and O.Bonnaud; Proceedings of the 10th Workshop on Dielectric in Microelectronics; 3 a 5 de novembro de 1999 pg. 63/64; Barcelona – Espanha.
  34. "Annealing Effects in the PECVD SiO2 Thin Films Deposited Using TEOS, Ar and O2 Mixture"; C. E. Viana, N. I. Morimoto, and O. Bonnaud; Proceedings of the 10th Workshop on Dielectric in Microelectronics; 3 a 5 de novembro de 1999 pag. 59/60; Barcelona – Espanha.
  35. "Silicon Based Materials and Micromechanical Structures for Chemical Sensors"; N.I. Morimoto and R. Furlan; Proceedings of Aseva Summer School-Edition 1999 - Asociacion Española Del Vacio Y Sus Aplicaciones, Ávila – Espanha – 10 a 16 de julho de 1999.
  36. "LPCVD deposition of silicon nitride assisted by high density plasmas", Luis da Silva Zambom, Ronaldo Domingues Mansano, Rogério Furlan, and Patrick Bernard Verdonck, Thin Solid Films, Volumes 343 - 344, 1999, pp. 299 - 301.
  37. "Development and characterization of an array of silicon based microelectrodes", Marcelo Bariatto Andrade Fontes, Rogério Furlan, Jorge J. Santiago-Avilés and Koiti Araki, Journal of Solid-State Devices and Circuits, Volume 7, No. 1, 1999, pp.12-16.
  38. "A study of modified silicon based microelectrodes for nitric oxide detection", Marcelo Bariatto Andrade Fontes, Lúcio Angnes, Koiti Araki, Rogério Furlan, and Jorge J. Santiago-Aviles, accepted for publication in Química Analítica, 1999.
  39. “Leakage Drain Current Behavior in Accumulation-Mode SOI pMOSFET Operating at High-Temperatures”, M. Bellodi and J. A. Martino, Electrochemical and Solid-State Letters, vol.02, n.07, p.345-346, julho,1999.
  40. “Components of the Leakage Drain Current in Accumulation-Mode SOI pMOSFET’s at High-Temperatures”, M. Bellodi and J. A. Martino, Journal of Solid-State Devices and Circuits, vol.07, n.01, p.07-11, fevereiro, 1999.
  41. “Anisotropic inductively coupled plasma etching os silicon with pure SF6”, R.D. Mansano, P. Verdonck, H.S. Maciel, and M. Massi, Thin Solid Films, vol. 343-344, pp. 381 –384,  1999.
  42. ”Effects of plasma etching on Raman scattering of DLC films”, M. Massi, R.D. Mansano, P. Verdonck, and H.S., Thin Solid Films, vol. 343-344, pp. 378 –380, 1999.
  43. “A comparative study of single and double Langmuir probe techniques for RF plasma characterization”, R.M. de Castro, G.A. Cirino, P. Verdonck, H.S. Maciel, M. Massi, M.B. Pisani, and R.D. Mansano, Contribuition to Plasma Physics n. 39  vol. 3 pp. 235-246 1999.
  44. "TEOS SiO2 Films Deposited at Low Temperature"; A.N.R. da Silva, N.I.Morimoto and O.Bonnaud; Journal Microelectronics and Reliability (Nov. 1999)
  45. "Characterization of Silicon Oxide Thin Films Deposited by TEOS PECVD"; A. N. R. da Silva, C. E. Viana and N. I. Morimoto; submitted to the Journal of Non Cristalline Solids (Oct. 1999).
  46. "Analysis of SiO2 Thin Films Deposited by PECVD Using an Oxygen-TEOS-Argon Mixture"; C. E. Viana, A. N.R. da Silva, N. I. Morimoto and O. Bonnaud; submitted Brazilian Journal of Physics (Nov. 1999).
  47. "Annealing Effects in the PECVD SiO2 Thin Films Deposited Using TEOS, Ar and O2 Mixture"; C. E. Viana, N. I. Morimoto and O. Bonnaud, submitted to the Journal of Microelectronics and Reliability (Nov. 1999)
  48. "Wetting of SiO2 Surfaces By Phospholipid Dispersions", Salay, L.C., Carmona-Ribeiro, A.M., Journal of Adhesion Science and Technology, V.13, N.10,  (1999), pp. 1165.

 
DMI Home Page
Index of Publications