International Publications (1997)

  1. "The formation of cobalt silicide in two thermal stages", E. W. Simões, R. Furlan e J. J. Santiago-Aviles, Proceedings of The Fourteenth International VLSI Multilevel Interconnection Conference (VMIC), Santa Clara, CA, junho de 1997, p. 268 - 70.
  2. "Dopant redistribution during the formation of cobalt silicide using two thermal stages", E. W. Simões, R. Furlan e J. J. Santiago-Aviles, Proceedings of The Fourteenth International VLSI Multilevel Interconnection Conference (VMIC), Santa Clara, CA, junho de 1997, p. 446.
  3. "Development of a silicon microprobe for NO detection", M. B. A. Fontes, J. J. Santiago-Aviles e R. Furlan, Proceedings of SPIE - Micromachining and Microfabrication Process Technology III, Edited by Shich-Chia and Chang Stella W. Pang, 29-30 September 1997, Austin, Texas, p. 64-71.
  4. "Fabrication process of free-standing polysilicon microfilaments using PECVD silicon oxide as a sacrificial layer", E. W. Simões, R. Furlan, N. I. Morimoto, O. Bonnaud, A. N. R. da Silva e M. L.Pereira da Silva, Technical Digest, MME’97 (Micromechanics Europe 1997), Eighth Workshop on Micromachining, Micromechanics & Microsystems, Southampton, U.K., 31 August - 2 September 1997, p. 47-50.
  5. "An architecture for a 12 Bits Resulution, Low Power Consumption and Fully Integrated CMOS Piezoresisitive Pressure Sensor with Thermal Compensation", F. Chavez, A. Olmos, R. Nogueira, E. Charry, C. Azeredo-Leme, Proceeding  of the VLSI’97, IX IFIP International Conference on Very Large Scale Integration.august 26-30 1997, Gramado-Brasil.
  6. “Tetragonal BaTiO3 Thin Films hydrothermally Grown on TiO2 Single Crystals”, V. M. Fuenzalida, J. G. Lisoni, N. I. Morimoto and J. C. Acquadro, Applied Surface Science, 108, pp.385-9, 1997
  7. “Deposition of Thick TEOS PECVD Silicon Oxide Layer for integrated Optical Waveguide Application”, D. A. P. Bulla e N. I. Morimoto, IUMRS-ICA-97, September 16-18, 1997, Chiba, Japan
  8. “A Mechanism for electroless Cu plating onto Si”, S. G. dos Santos Filho, A. A. Pasa and C. M. Hasenack, Microelectronic Engineering, 33, pp.149-155, 1997.
  9. “Electroless and electro-plating of Cu on Si”, S. G. dos Santos Filho, L.F.O. Martins, P.C.T. D’Ajello, A.A. Pasa, C.M. Hasenack, Microelectronic Engineering, 33 pp. 59-64, 1997.
  10. “Electrochemical evidence of a copper-induced etching of n-type Si in dilute hydrofluoric acid solutions”, L.F.O. Martins, L. Seligman, S.G. dos Santos Filho, P.C.T. D’Agello, C. M. Hasenack and A.A. Pasa., Journal of the Electrochemica Society, 144, pp.107-108, 1997.
  11. “A New Method For Determination of The Fixed Charge Density at the Buried Oxide/Underlying Substrate Interface in SOI MOSFETs”, M.A. Pavanello and J. A. Martino, aceito para publicação no VIII SOI Symposium da 192nd Electrochemical Society Meeting, Paris, agosto, 1997.
  12. ”Analytical Modeling of the Substrate Effect on Accumulation-Mode SOI pMOSFETs at Room Temperature and at 77 K”, M.A. Pavanello, J. A. Martino and J. P. Colinge, Microelectronic Engineering, vol. 36, p. 375, 1997.
  13. “Improved Channel Length and Series Resistance Extraction for Short-Channel MOSFETs Suffering from Mobility Degradation”, A.S. Nicolett, J. A. Martino, E. Simoen and C. Claeys, Journal of Solid-State Devices and Circuits, Vol. 05, n. 01, p. 01, 1997.
  14. “A Simple Technique to Reduce the Influence of the Series Resistance on the BULK and SOI MOSFET Parameter Extraction”, A.S. Nicolett and J. A. Martino, Journal of Solid-State Devices and Circuits, Vol. 05, n. 01, p. 05, 1997.
  15. ”Substrate Influences on Fully Depleted Enhancement Mode SOI MOSFETs at Room Temperature and at 77 K”, M. A. Pavanello, J. A. Martino and J. P. Colinge, Solid State Electronics, vol. 41, n. 1, p. 111, 1997.
  16. “Simple Method to Extract the Length Dependent Mobility Degradation Factor at 77 K”, A.S. Nicolett, J. A. Martino, E. Simoen and C. Claeys, aceito para publicação no 191th Electrochemical Society Meeting, Montreal, Canada, maio, 1997.
  17. “Mechanisms of Surface Roughness Induced in Silicon by Fluorine Containing Plasmas”, R.D. Mansano, P. Verdonck, H.S. Maciel, Aceito para publicação em Thin Solid Films/Vacuum (1997)
  18. “Silicon wall profiles generated by isotropic dry etching processes”, R.D. Mansano, P. Verdonck, H.S. Maciel, Proceedings of the 11th international colloquium on plasma processes, pp 45-48, Le Mans, França, maio 1997.
  19. “Performance characterisation of a RIE reactor with a built-in RF excitation coil”, M. Massi, R.D. Mansano, P. Verdonck, H.S. Maciel, M.B. Pisani, G.A. Cirino, Aceito para apresentação no 44th National Symposium of the American Vacuum Society, San Jose, CA, outubro 1997.

 
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