International Publications (1996)

  1. "Formation of titanium silicide strap lines by the deposition of a double layer of amorphous silicon - titanium", A. N. R. Silva; R. Furlan; J. J. Santiago-Aviles, Proceedings MRS, Vol. 402, Silicide Thin Films - Fabrication, Properties and Applications, Edited by Raymond T. Tung, Karen Maex, Paul W. Pellegrini and Leslie H. Allen, 1996, pp. 125 - 129.
  2. "Substrate influence on the formation of titanium disilicide on polycrystalline silicon", A. N. R. Silva; R. Furlan; J. J. Santiago-Aviles, Symposium Proceedings MRS, Vol. 402, Silicide Thin Films - Fabrication, Properties and Applications, Edited by Raymond T. Tung, Karen Maex, Paul W. Pellegrini and Leslie H. Allen, 1996, pp. 119 - 124.
  3. "Metal Contamination of Silicon Wafers Induced by Reactive Ion Etching Plasmas and its Behaviour upon Subsequent Cleaning Procedures", P. Verdonck, C. Hasenack, R. Mansano, J. Vac Sc. & Techn. B, vol 14, pp 538 - 543 (Jan/Feb 1996).
  4. "Optical implementation of image encryption", L. Gonçalves Neto and Y. Sheng, Optical Engineering, Optical Engineering, Vo.35, No.9, p.2459-2463, September 1996.
  5. "Full range continuous complex modulation using two coupled-mode liquid crystal televisions", Luiz Gonçalves Neto, Danny Roberge and Yunlong Sheng, Applied Optics, Vo. 35, No. 23, p. 4567-4576, August 1996.
  6. "Speckle-free phase Fresnel holograms and beam shaping elements", L. Gonçalves Neto and Y. Sheng, OSA 1996 Diffractive Optics and Micro Optics Toptical Meeting, Boston, (1996).
  7. "Electro-optical devices and systems for processing", Yunlong Sheng, Luiz Gonçalves Neto, Danny Roberge,  Lixin Shen and Gilles Paul-Hus, 1996 SPIE's International Symposium on Optical Science, Engineering and  Instrumentation, Denver, Colorado, 4-9 August 1996. SPIE Proceedings Vol. CR65 (invited paper).
  8. "Optical image encryption using random phase masks and switchable holograms", Luiz Gonçalves Neto and Yunlong Sheng, 1996 OSA annual meeting, Rochester, NY, 20-24 October 1996, p 112.
  9. "Theoretical and Experimental Study of the Substrate Effect on the Fully Depleted SOI MOSFET at Low Temperatures", M. A. Pavanello, J.A. Martino and J.P. Colinge, WOLTE 2 - II European Workshop on Low Temperature Electronics and Devices Proceedings, Leuven, Belgium, June 26-28, 1996, pp C3/67-72.
  10. "Mobility Degradation Influence on the SOI MOSFET Channel Length Extration at 77 K", A. S. Nicolett, J. A.  Martino, E. Simoen and C. Claeys, WOLTE 2 - II European Workshop on Low Temperature Electronics and Devices Proceedings, Leuven, Belgium, June 26-28, 1996, pp C3/55-59.
  11. "Parameter Extration of MOSFETs Operated at Low Temperature", E. Simoen, C. Claeys and J. A. Martino, Invited paper - WOLTE 2 - II European Workshop on Low Temperature Electronics and Devices Proceedings, Leuven, Belgium, June 26-28, 1996, pp C3/29-42.
  12. "Extraction of the Interface and Oxide Charge Density in Silicon on Insulator MOSFETs", E. Simoen, C. Claeys, N. Lukyanchikova, M. Petrichuk, N. Gabar, J. A. Martino and V. Sonnenberg, Proceeding of the 7th International Symposium on SOI Devices (189th Electrochemical Society Meeting, Los Angeles, CA, USA), May 5-10, 1996, ECS Vol 96-3 pp 309-317.
  13. "Development of a Cluster Tool and Analysis of Deposition of Silicon oxide by TEOS/O2 PECVD", N. I.  Morimoto, J. W. Swart, 1996 Materials Research Society (MRS) Spring Meeting; San Francisco, April 1996, pp 263-268.
  14. "Microfluidics", Jay N. Zemel , Rogério Furlan; Publicação: Capítulo 12 do "Handbook Of Chemical and  Biological Sensors", edited by Richard F. Taylor e Jerome S. Schultz, Institute of Physics Publishing, Bristol and Philadelphia, ISBN: 0 7503 0323 9, pp. 317 - 347, June 1996.
  15. "Behavior of microfluidic amplifiers", Rogério Furlan , Jay N. Zemel, Sensors and Actuators A 51 (1996) pp. 239  - 246.
  16. "Comparison of wall attachment and jet deflection microfluidic amplifiers", R. Furlan , Jay N. Zemel, Proceedings do IEEE MEMS-96, San Diego, CA, February 1996, pp.372-377.
  17. "Deep trench etching in silicon with fluorine containing plasmas", R.D. Mansano, P. Verdonck, H.S. Maciel,  Applied Surface Science, Vol 100/101, pp 583-586 (1996).
  18. "Mechanisms of surface roughness induced in silicon by fluorine containing plasmas", R.D. Mansano, P. Verdonck, H.S. Maciel, Abstract books of the 10th International conference on thin films, p 263, Salamanca, Spain, September 1996.
  19. "A Precise Method to determine the stress current to be applied to electromigration test structures", L.C.. Molina Torres, P. Verdonck, Solid State Electronics, Vol 39, , pp 1805-1807 ( 1996).
  20. "New Empirical Model for Leakage Current of SOI MOSFET's Valid From Room to High Temperature," M. Bellodi, J. A. Martino, D. Flandre, Journal of Solid-State Devices and Circuits, Vol. 04, p. 07-10, (1996).
  21. "The influence of Si/SiO2 interface roughness on electronic roughness" M.C.V. Lopes, S.G.d. Santos Filho, C.M.  Hasenack, V. Baranauskas, Journal of the Electrochemical Society, v. 143, p. 1215, (1996).
  22. "The Electroless-plating mechanism of copper onto silicon surfaces in diluted hydrofluoric solutions", S.G.d. Santos Filho, C.M. Hasenack,. In: 189th Meeting of the Electrochemical Society, Los Angeles, 5-10, May, 1996,  Proceedings. Electrochemical Society, (1996) (Abstract No. 1033).

 
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