International
Publications (1989)
-
"Titanium Silicide Formation and Arsenic Dopant
Behavior Under RTP in Vacuum", R.Furlan and J.W.Swart, 174th Meeting of
the Electrochemical Soc., vol.136, nº 6, pp.1806, 1811, (1989), Abstract
nº 264, Outubro de 1988, Chicago - USA
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"The Doping of Silicon with Boron by Rapid
Thermal Processing", J.P.de Souza, C.M.Hasenack, J.W.Swart, Semiconductor
Science and Technology, 3;277, 1988.
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"An Experimental Measurement Technique of
Interconnection RC delay for Integrated Circuits Using the Step Voltage
Response", S.G.dos Santos Filho, J.W.Swart, 1989 IEEE International Conference
on Microelectronic Test Structures (ICMTS - 89)
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"Analysis of the Mean Crystallite Size and
Microstress in Titanium Silicide Thin Films", N.I.Morimoto, J.W.Swart and
H.G.Riella, European Workshop on Refractory Metals and Silicides, Março
de 1989, Houthalen - Belgium
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"Titanium Silicide Formation and Arsenic Dopant
Behavior Under Rapid Thermal Treatments in Vacuum", R.Furlan and J.W.Swart,
J.Electrochemical Soc., vol.136, nº 6, 1806, 1989
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"Incluence of Si-Surface Characteristics on
The Quality of Thin Thermal SiO2 Layers", M. Heyns, C.M. Hasenack, R. Dekeersmaeckere
R. Falster, Semiconductor Interface Specialists Conference (SISC), Dezembro
1989, E.U.A.
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"Dry Etching of Niobium Oxide Thin Films",
A.C.Seabra, P.Verdonck, W.Xavier and V.Baranauskas, Proc. of The SPIE:
Dry Processing for Submicrometer Lithography, vol 1185 pp80-83., October
1989, Santa Clara, California
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"The Impact of The Si-Surface Characteristics
an MOS Device Yield", M. Heyns, C.M. Hasenack, R. Dekeersmaicher e R. Falster,
Artigo Convidado Apresentado no 176 Reunião da The Electrochemical
Society, Simpósio Intitulado "First International Symposium an Cleaning
Technology in Semiconductor Device Manufactury (Hollywood, Outubro 15-20,
1989)
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